Spectroscopic ellipsometry of intentionally disordered superlattices
نویسندگان
چکیده
We characterized the electronic properties of ordered and intentionally disordered GaAs–AlxGa12xAs superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry in the near band-edge region. The spectra have been compared to the calculate electronic structure. The optical transitions in the various superlattices show specific features related to their different electronic structure. q 2004 Elsevier Ltd. All rights reserved.
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عنوان ژورنال:
- Microelectronics Journal
دوره 35 شماره
صفحات -
تاریخ انتشار 2004